A power MOSFET with the industry at the lowest resistance for a 60V device in a package with double-sided cooling is released by Vishay. The SiE876DF news, which comes in an SO-8 format PolarPAK package offers maximum resistance of 6.1 milliohms at 10V gate drive, an improvement of 13% in the next device gives the best comparable market society.
The n-channel SiE876DF is for the supply of industrial type power control circuits of motors, AC / DC for the servers and routers, and systems that use point of load (POL) Power Conversion. It is likely to be used as a switch on the primary side or secondary side rectification in higher education conversion of the intermediate bus voltage (CBI) designs.
In each of these applications the low resistance SiE876DF result in lower conduction losses and thus save energy. Besides the low conduction losses, which are TrenchFET silicon, double the cooling by the PolarPAK package enables better thermal performance for high current applications. This makes cooperation with a lower junction temperature. The lead frame PolarPAK based, encapsulated design also offers increased protection and reliability, in addition to simplification of production, because death is not exposed. The device has the same format as the other PolarPAK devices with drain-source voltage of less than 150 V, thus simplifying the PCB design. The SiE876DF is 100% Rg and UIS tested.
Samples and production 60V SiE876DF available, with lead times of 10 to 12 weeks for large orders, the company said.
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