Samsung developed the first 40-nm volume production of memory

Following the 2005 pioneered the development of 60-nanometer memory, in 2006 to develop 50-nanometer memory, Samsung Electronics has developed the world's first 40-nanometer 1GDDR2 dynamic memory (a nanometer is equal to billionth of a meter), the first three quarter of this year's mass production.

It is understood that 40-nanometer memory commonly used in 50,60 with the current nano-memory than the smaller chip area, while in the low-power low-pressure environment to run. 1.2V environment running 40-nanometer memory will be better than 50 nm 1.5V memory consumption by more than 30%, high energy-consuming equipment for servers to provide more environmentally friendly and efficient energy solutions.

Samsung also revealed that in 2009 will be a 40-nm 2GDDR3 the development and mass production, the product than last year's September volume production of 50-nanometer 2GDDR3 productivity increased by about 60%.

Vishay - New Launch Rectifier with Performance Improvements

A new 600V FRED Pt Hyper Fast Rectifier tandem is unveiled by Panasonic. The device reduces the loss of high-efficiency DC mode (CCM) for correcting the power factor (PFC) applications with extremely fast reverse recovery time, low forward voltage drop and low temperature resistance package.

The 8S2TH06I-M is optimized for use in desktop PCs, servers and power supplies for telecommunications, UPS systems, large-screen plasma and LCD power supplies, industrial power supplies, inverters and solar energy.

Balance single 'A' of the conduction and switching performance improvements, the 8S2TH06I-M to provide an overall reduction of the average power of 22% in typical applications of high frequency PFC.

Who has a reverse recovery time of the 11nS, the 8S2TH06I-M combines its Hyper-Fast switching performance with a rating of low forward voltage drop of 2.1V at 8A, the device to operate at higher frequencies to increase overall efficiency of the system. Her 2-pin TO-220 makes the device 8Adc provide a temperature of 120C in cases when an optimal insulation to 2 kV. The ceramic isolated TO-220 package is designed for easy installation with non-isolated units, but with a minimal effect on the benchmark thermal resistance of 2.3c / W junction to case.

Reverse recovery scheme for 8S2TH06I-M 7nC to 35nC at 25C and 125c, which significantly improve the arbitration between QRR and voltage drop represents. The result is the ability to combine operations with high frequency with lower losses, heatsinks and passive components makes it possible to restructure. Also, the M-8S2TH06I operating junction temperature of 175C make designs more robust and cost-effective and represents an improvement of 15% over competing devices, where the maximum is 150C, the company said.

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